SNU College of Engineering (Dean Cha Kook-Heon) announces on the 9^th that Professor Hwang Cheol Seong from the Department of Materials Science and Engineering has been nominated as the recipient of Kahng Dawon Award of the 25^th Korean Conference on Semiconductors held at High1 Resort (Gangwon Province) on the 6^th.
 
Up till now, Professor Hwang has released 527 papers on semiconductor manufacturing, elements, and materials; Of which, one, written in 2010, is a notable research that has been published on “Nature Nanotechnology” and has been cited over 1400 times. His resistive switching memory researches, particularly the examination of resistive switching memory’s mechanism using metal oxide films, were acknowledged for their contribution to the growth of the Korean semiconductor industry.
 
The Kahng Daewon Award is an award established in memory of Professor Kahng Daewon (1931~1992) for his invention of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which is the basic element of today’s semiconductors, and the world’s first Floating Gate non-volatile semiconductor memory. This award is regarded as the most prestigious award in the field of semiconductor in Korea.
 
In 2015, Professor Hwang, the second recipient of the Kahng Daewon Award, has built a statue of Professor Kahng in front of the SNU Inter-university Semiconductor Research Center to commemorate his achievements and contributions to society.
 
Professor Hwang states, “It is a great honor to be nominated for the Kahng Daewon Award after SNU Department of Electrical and Computer Engineering Professor Park Byung-Gook. I am glad that the works in semiconductor manufacturing and general material science are being acknowledged. I will further devote to the field of semiconductor materials and production.”